Boron Nitride Field Emitter Using Micro-Fabricated Gate Technology (Boron Nitride)

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Boron Nitride Field Emitter Using Micro-Fabricated Gate Technology (Boron Nitride)

Motivation

  • Current field emission technology is too susceptible to environmental degradation

Approach

  • Use boron nitride, a material which is very robust to high pressure environments and atomic oxygen, along with low turn-on electric fields
  • Develop micro-fabricated gates to extract electrons at low voltage relative to mechanical grids
Boron Nitride

Results

  • Phase-II STTR completed
Boron Nitride Results
Boron Nitride Results

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